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| NTE3096 Optoisolator Low LED Drive NPN Transistor Output Description: The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor in a 6-Lead DIP type package. This device is designed for applications requiring low LED drive current, high electrical isolation, small package size and low cost such as interfacing and coupling systems, phase feedback controls, solid-state relays and general purpose switching circuits. Features: D High Transfer Ratio with Low LED Drive D High Electrical Isolation D Low Collector-Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Infrared Emitting Diode Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Forward Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1sec, 2% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate above 25C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/C Phototransistor Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C Total Device Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C Surge Isolation Voltage (60Hz, Peak AC, 5sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7500V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Electrical Characteristics: (TA = +25C, unless otherwise specified) Parameter Infrared Emitting Diode Forward Voltage Reverse Leakage Current Capacitance VF IR CJ IF = 1mA, TA = 0 to +70C VR = 6V V = 0, f = 1MHZ 0.7 - - 1.1 0.05 150 1.4 10 - V A pf Symbol Test Conditions Min Typ Max Unit Phototransistor (IF = 0 unless otherwise specified) Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Dark Current V(BR)CEO IC = 1mA V(BR)CBO IC = 100A V(BR)EBO IE = 100A ICEO ICBO IC/IF VCE(sat) R(I-O) VISO C(I-O) ton toff VCE = 5V, Base Open VCE = 30V, Base Open, TA = +70C Collector-Base Dark Current Coupled Characteristics DC Current Transfer Ratio IF = 1mA, VCE = 5V TA = 0 to +70C Collector-Emitter Saturation Voltage Isolation Resistance Isolation Surge Voltage Isolation Capacitance Switching Characteristics Turn-On Time Turn-Off Time VCE = 10V, V, RL = 100 - - - - 20 20 s s IF = 1mA, IC = 100A V(I-O) = 500VDC, Note 1 60Hz, Peak AC, 5sec, Note 1 V(I-O) = 0, f = 1MHZ 50 30 - 1011 7500 - - - - - - 1.3 - - 0.5 - - 2.5 % % V V pF VCB = 5V, Emitter Open 30 70 7 - - - - - - 1.0 - - - - - 25 50 10 V V V nA A nA Note 1. For this test, LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6 are common. 6 5 4 .260 (6.6) Max Pin Connection Diagram Anode Cathode N.C. 1 2 3 6 Base 5 Collector 4 Emitter 1 2 3 .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .300 (7.62) .350 (8.89) Max .085 (2.16) Max .100 (2.54) |
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